vishay general semiconductor 3kasmc10 thru 3kasmc43a new product document number 88480 29-jun-06 www.vishay.com 1 surface mount automotive tran sient voltage suppressors high temperature st ability & high reli ability conditions features ? patented par ? construction ? available in unidirectional polarity only ? 3000 w peak pulse power capability with a 10/1000 s waveform ? excellent clamping capability ? very fast response time ? low incremental surge resistance ? typical i d less than 1.0 a above 13 v rating ? meets msl level 1, per j-std-020c, lf max peak of 260 c ? solder dip 260 c, 40 seconds ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ics, mosfet, signal lines of sensor units for consumer, computer, industrial, automotive and telecommunication. mechanical data case: do-214ab (smc) epoxy meets ul 94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002b and jesd22-b102d he3 suffix for high re liability grade (aec q101 qualified) polarity: color band denotes cathode end * patent #'s 4,980,315 5 , 278 , 094 patented* 5,166,769 do-214ab (smc) major ratings and characteristics v wm 10 v to 43 v p ppm 3000 w p d 6.0 w i fsm 200 a t j max. 185 c note: (1) non-repetitive current pulse, per fig. 3 and derated above t a = 25 c per fig. 2 (2) measured on 8.3 ms single half sine- wave, or equivalent square wave, dut y cycle = 4 pulses per minute maximum maximum ratings (t a = 25 c unless otherwise noted) parameter symbol value unit peak pulse power dissipatio n with a 10/1000 s waveform (1) (fig. 3) p ppm minimum 3000 w peak power pulse current with a 10/1000 s waveform (1) (fig. 1) i ppm see next table a peak forward surge current 8.3 ms single half sine-wave (2) i fsm 200 a power dissipation on infi nite heatsink at t l = 75 c (fig. 6) p d 6.0 w maximum instantaneous forward voltage at 100 a (2) v f 3.5 v operating junction and storage temperature range t j , t stg - 65 to + 185 c
www.vishay.com 2 document number 88480 29-jun-06 vishay general semiconductor 3kasmc10 thru 3kasmc43a note: (1) pulse test: t p 50 ms (2) surge current waveform per fig. 3 and derated per fig. 2 (3) all terms and symbols are consistent with ansi/ieee c62.35 electrical characteristics (t a = 25 c unless otherwise noted) device type device marking code breakdown voltage v (br) (1) at i t (v) test current i t (ma) stand-off voltage v wm (v) maximum reverse leakage at v wm i r (a) t j = 150 c maximum reverse leakage at v wm i d (a) maximum peak pulse surge current i ppm (2) (a) maximum clamping voltage at i ppm v c (v) min max 3kasmc10 3aw 11.1 13.6 1.0 10 5.0 50 160 18.8 3kasmc10a 3ax 11.1 12.3 1.0 10 5.0 50 177 17.0 3kasmc11 3ay 12.2 14.9 1.0 11 5.0 50 149 20.1 3kasmc11a 3az 12.2 13.5 1.0 11 5.0 50 165 18.2 3kasmc12 3bd 13.3 16.3 1.0 12 2.0 20 136 22.0 3kasmc12a 3be 13.3 14.7 1.0 12 2.0 20 151 19.9 3kasmc13 3bf 14.4 17.6 1.0 13 2.0 20 126 23.8 3kasmc13a 3bg 14.4 15.9 1.0 13 2.0 20 140 21.5 3kasmc14 3bh 15.6 19.1 1.0 14 1.0 10 116 25.8 3kasmc14a 3bk 15.6 17.2 1.0 14 1.0 10 129 23.2 3kasmc15 3bl 16.7 20.4 1.0 15 1.0 10 112 26.9 3kasmc15a 3bm 16.7 18.5 1.0 15 1.0 10 123 24.4 3kasmc16 3bn 17.8 21.8 1.0 16 1.0 10 104 28.8 3kasmc16a 3bp 17.8 19.7 1.0 16 1.0 10 115 26.0 3kasmc17 3bq 18.9 23.1 1.0 17 1.0 10 98.4 30.5 3kasmc17a 3br 18.9 20.9 1.0 17 1.0 10 109 27.6 3kasmc18 3bs 20.0 24.4 1.0 18 1.0 10 93.2 32.2 3kasmc18a 3bt 20.0 22.1 1.0 18 1.0 10 103 29.2 3kasmc20 3bu 22.2 27.1 1.0 20 1.0 10 83.8 35.8 3kasmc20a 3bv 22.2 24.5 1.0 20 1.0 10 92.6 32.4 3kasmc22 3bw 24.4 29.8 1.0 22 1.0 10 76.1 39.4 3kasmc22a 3bx 24.4 26.9 1.0 22 1.0 10 84.5 35.5 3kasmc24 3by 26.7 32.6 1.0 24 1.0 10 69.8 43.0 3kasmc24a 3bz 26.7 29.5 1.0 24 1.0 10 77.1 38.9 3kasmc26 3cd 28.9 35.3 1.0 26 1.0 10 64.4 46.6 3kasmc26a 3ce 28.9 31.9 1.0 26 1.0 10 71.3 42.1 3kasmc28 3cf 31.1 38.0 1.0 28 1.0 10 60.0 50.0 3kasmc28a 3cg 31.1 34.4 1.0 28 1.0 10 66.1 45.4 3kasmc30 3ch 33.3 40.7 1.0 30 1.0 15 56.1 53.5 3kasmc30a 3ck 33.3 36.8 1.0 30 1.0 15 62.0 48.4 3kasmc33 3cl 36.7 44.9 1.0 33 1.0 15 50.8 59.0 3kasmc33a 3cm 36.7 40.6 1.0 33 1.0 15 56.3 53.3 3kasmc36 3cn 40.0 48.9 1.0 36 1.0 20 46.7 64.3 3kasmc36a 3cp 40.0 44.2 1.0 36 1.0 20 51.6 58.1 3kasmc40 3cq 44.4 54.3 1.0 40 1.0 20 42.0 71.4 3kasmc40a 3cr 44.4 49.1 1.0 40 1.0 20 46.5 64.5 3kasmc43 3cs 47.8 58.4 1.0 43 1.0 20 39.1 76.7 3kasmc43a 3ct 47.8 52.8 1.0 43 1.0 20 43.2 69.4
document number 88480 29-jun-06 www.vishay.com 3 3kasmc10 thru 3kasmc43a vishay general semiconductor note: (1) mounted on minimum recommended pad layout ratings and characteristics curves (t a = 25 c unless otherwise noted) thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol value unit thermal resistance junction to ambient air (1) r ja 77.5 c/w thermal resistance junction to leads r jl 18.3 ordering information preferred p/n unit weight (g) preferred package code base quantity delivery mode 3kasmc10ahe3/57t 0.211 57t 850 7" diameter plastic tape & reel 3kasmc10ahe3/9at 0.211 9at 3500 13" diameter plastic tape & reel figure 1. peak pulse power rating curve figure 2. pulse power or current versus initial junction temperature 0.1 1 10 100 0.1 1 10 100 1000 10000 p ppm - peak po w er (k w ) td - p u lse w idth ( s) 0 25 50 75 100 0 50 100 150 200 peak p u lse p o w er (p pp ) or c u rrent (i pp ) derating in p ercentage ( %) t j - initial temperat u re (c) figure 3. pulse waveform figure 4. typical j unction capacitance 0 50 100 150 td 0 1.0 2.0 3.0 4.0 tr = 10 sec peak v al u e i ppm half v al u e - i ppm i pp 2 10/1000 sec w a v eform as defined b y r.e.a. t j = 25 c p u lse w idth (td) is defined as the point w here the peak c u rrent decays to 50 % of i ppm i ppm - peak p u lse c u rrent, % i rsm t - time (ms) 100 1000 10000 10 20 30 40 50 c j - j u nction capacitance (pf) v w m - re v erse stand-off v oltage ( v ) t j = 25 c f = 1.0 mhz v sig = 50 m v p-p meas u red at zero bias meas u red at stand-off v oltage
www.vishay.com 4 document number 88480 29-jun-06 vishay general semiconductor 3kasmc10 thru 3kasmc43a package outline dimensions in inches (millimeters) figure 5. maximum non-repetitive/peak forward surge current 200 100 nu m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a) 10 50 50 10 1 100 5 t j = t j max. 8 .3 ms single half sine- w a v e figure 6. power derating curve p d , po w er dissipation ( w ) t l - lead temperat u re (c) 6 5 4 3 2 1 0 0 25 50 75 100 125 150 175 200 60 hz resisti v e or ind u cti v e load 0.260 (6.60) 0.2 8 0 (7.11) 0.006 (0.152) 0.012 (0.305) 0.030 (0.76) 0.060 (1.52) 0.00 8 (0.2) 0.305 (7.75) 0.320 ( 8 .13) 0.220 (5.59) 0.246 (6.22) 0.079 (2.06) 0.103 (2.62) 0.114 (2.90) 0.126 (3.20) cathode band do-214ab (smc) 0.1 8 5 max. (4.69 max.) 0.320 ref 0.126 mi n . (3.20 mi n .) 0.060 mi n . (1.52 mi n .) mountin g pad layout 0 (0)
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.
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